DocumentCode :
1030533
Title :
Modeling of steady-state optical phenomena in transistors and diodes
Author :
Gary, P.A. ; Linvill, John G.
Author_Institution :
Bell Telephone Laboratories, Inc., Allentown, Pa.
Volume :
15
Issue :
5
fYear :
1968
fDate :
5/1/1968 12:00:00 AM
Firstpage :
267
Lastpage :
274
Abstract :
A lumped model is derived for photodiodes and phototransistors from which steady-state spectral properties, such as quantum efficiency, can be determined. The model is derived in a manner such that its utility extends to regions of any length ω that is, there is no 
restriction, where 
represents the minority-carrier diffusion length in the region. The validity of the resulting model is demonstrated by showing that the lumped model predicts the empirically measured quantum efficiency of planar photodiodes to within 10 percent.
restriction, where represents the minority-carrier diffusion length in the region. The validity of the resulting model is demonstrated by showing that the lumped model predicts the empirically measured quantum efficiency of planar photodiodes to within 10 percent.Keywords :
Electrons; Equations; Helium; Photodiodes; Phototransistors; Predictive models; Semiconductor diodes; Semiconductor impurities; Semiconductor process modeling; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16177
Filename :
1475079
Link To Document :
