DocumentCode :
1030552
Title :
An improved dispersion relationship for the p-n junction avalanche diode
Author :
Manasse, Fred K. ; Shapiro, Jonathan S.
Author_Institution :
Princeton University, Princeton, N.J.
Volume :
15
Issue :
5
fYear :
1968
fDate :
5/1/1968 12:00:00 AM
Firstpage :
282
Lastpage :
289
Abstract :
A tractable and more physically realistic dispersion relationship for the avalanche diode than previously available has been developed, This includes terms relating to the differences in hole and electron velocities and ionization coefficients. Analysis of this modified dispersion relation indicates new ranges for instabilities. Plots for selected cases are presented.
Keywords :
AC generators; Charge carrier processes; Diodes; Dispersion; Electron mobility; Helium; Ionization; Nonlinear equations; P-n junctions;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16179
Filename :
1475081
Link To Document :
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