Title :
Deep levels in GaAs heteroepitaxial layers grown on (100) Ge substrates by MOCVD
Author :
Kobayashi, Yoshiyuki ; Ikeda, Ken-ichi ; Shinoda, Yoichi
Author_Institution :
NTT, Electrical Communications Laboratories, Musashino, Japan
Abstract :
Deep levels in MOCVD-grown GaAs/(100)Ge were studied by the deep-level Fourier spectroscopy (DLFS) method. Single domain wafers contain EL2 similar to homoepitaxial wafers. EL2 was not observed in antiphase domain wafers, where detected deep traps were found to consist of more than two traps.
Keywords :
Fourier transform spectroscopy; III-V semiconductors; antiphase domains; chemical vapour deposition; deep levels; electron traps; gallium arsenide; germanium; semiconductor epitaxial layers; semiconductor technology; substrates; vapour phase epitaxial growth; DLFS; EL2; GaAs-Ge heteroepitaxial layers; Ge; MOCVD; antiphase domain wafers; deep levels; deep traps; deep-level Fourier spectroscopy; heteroepitaxial wafers; semiconductors; single domain wafers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870171
