• DocumentCode
    1030553
  • Title

    Deep levels in GaAs heteroepitaxial layers grown on (100) Ge substrates by MOCVD

  • Author

    Kobayashi, Yoshiyuki ; Ikeda, Ken-ichi ; Shinoda, Yoichi

  • Author_Institution
    NTT, Electrical Communications Laboratories, Musashino, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    242
  • Lastpage
    244
  • Abstract
    Deep levels in MOCVD-grown GaAs/(100)Ge were studied by the deep-level Fourier spectroscopy (DLFS) method. Single domain wafers contain EL2 similar to homoepitaxial wafers. EL2 was not observed in antiphase domain wafers, where detected deep traps were found to consist of more than two traps.
  • Keywords
    Fourier transform spectroscopy; III-V semiconductors; antiphase domains; chemical vapour deposition; deep levels; electron traps; gallium arsenide; germanium; semiconductor epitaxial layers; semiconductor technology; substrates; vapour phase epitaxial growth; DLFS; EL2; GaAs-Ge heteroepitaxial layers; Ge; MOCVD; antiphase domain wafers; deep levels; deep traps; deep-level Fourier spectroscopy; heteroepitaxial wafers; semiconductors; single domain wafers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870171
  • Filename
    4257497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030553