Title :
Integration of waveguides and photodetectors in SiGe for 1.3 μm operation
Author :
Splett, A. ; Zinke, T. ; Petermann, K. ; Kasper, E. ; Kibbel, H. ; Herzog, H.-J. ; Presting, H.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany
Abstract :
The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for /spl lambda/=1.3 μm. The maximum bandwidth is 2 GHz.
Keywords :
Ge-Si alloys; infrared detectors; integrated optics; integrated optoelectronics; optical waveguides; photodetectors; semiconductor materials; 1.3 micron; 11 percent; 2 GHz; 2.5 Gbit/s; 200 nA; 7 V; MBE-grown SiGe-layers; Si; SiGe-Si; dark currents; fiber-waveguide-detector coupling; integration; maximum bandwidth; photodetectors; quantum efficiency; reverse bias; short photodetectors; silicon; single-mode rib waveguides; waveguides; Absorption; Detectors; Germanium silicon alloys; Integrated optics; Molecular beam epitaxial growth; Optical receivers; Optical waveguides; Photodetectors; Silicon germanium; Sputter etching;
Journal_Title :
Photonics Technology Letters, IEEE
