DocumentCode :
1030576
Title :
Transistor noise at high injection levels
Author :
Tong, Alvin H. ; Van der Ziel, Albert
Author_Institution :
IBM Corporation, East Fishkill Facility, Hopewell Junction, N.Y.
Volume :
15
Issue :
5
fYear :
1968
fDate :
5/1/1968 12:00:00 AM
Firstpage :
307
Lastpage :
313
Abstract :
Measurements of transistor noise at high injection levels are compared with the predictions made by the low-level injection theory, The noise is represented by an emf eein series with the emitter and a current generator i in parallel with the collector: eeis split into a part ee\´ fully correlated with i and a part ee" uncorrelated with i . The measured values of \\bar{i^{2}} usually agree very well with theory, even at high currents; this indicates that the low-level injection theory of \\bar{i^{2}} remains correct at high injection levels. The measurements of e_{\\overline{e^{\\prime \\prime 2}}} , though inaccurate, seem to indicate that the predictions made by the low-level injection theory are approximately correct at high injection levels. The measurements of the cross correlation \\bar{e_{e}i^{*}} indicate a large discrepancy with the low-level injection theory. The theory predicts that \\bar{e_{e}i^{*}} is quite small at low frequency and is mainly imaginary at high frequencies. The measurements indicate that \\bar{e_{e}i^{*}} is quite large at low frequencies and that its real part is larger than the imaginary part at high frequencies. The fact that \\bar{e_{e}i^{2}} varies as \\sqrt {I_{E}} , so that it approaches zero at low currents, indicates that it is a high-level injection effect.
Keywords :
Broadband amplifiers; Circuit noise; Current measurement; Electric resistance; Electric variables; Electrical resistance measurement; Frequency; Harmonic distortion; Noise level; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16182
Filename :
1475084
Link To Document :
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