Title :
A very low operation current InGaAsP/InP total internal reflection optical switch using p/n/p/n current blocking layers
Author :
Oh, Kwang-Ryong ; Park, Ki-Sung ; Oh, Dae-Kon ; Kim, Hong-Man ; Park, Hyung Moo ; Lee, Kwyro
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommunic. Res. Inst., Taejon, South Korea
Abstract :
A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n/sup +/-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits.<>
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light reflection; optical switches; optical waveguides; p-n heterojunctions; 1.55 micron; 20 mA; InGaAsP-InP; large effective contact area; n/sup +/-InP substrate; optical integrated circuits; p/n/p/n current blocking layers; self-aligned structure; very low operation current InGaAsP/InP total internal reflection optical switch; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical films; Optical reflection; Optical switches; Optical waveguides; Silicon compounds; Substrates; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
