• DocumentCode
    1030667
  • Title

    Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

  • Author

    Nathanson, Harvey C. ; Jund, Christian ; Grosvalet, Jean ; Jund, C. ; Grosvalet, J.

  • Author_Institution
    Westinghouse Research Laboratories, Pittsburgh, Pa.
  • Volume
    15
  • Issue
    6
  • fYear
    1968
  • fDate
    6/1/1968 12:00:00 AM
  • Firstpage
    362
  • Lastpage
    368
  • Abstract
    Measurements of apparent threshold voltages for conduction of both n-p-n and p-n-p MOS-
  • Keywords
    Aluminum; Argon; Cryogenics; Glass; MOSFETs; Photonic band gap; Silicon; Temperature dependence; Temperature distribution; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16191
  • Filename
    1475093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030667