مرکز منطقه ای اطلاع رساني علوم و فناوري - Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

DocumentCode :

1030667

Title :

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

Author :

Nathanson, Harvey C. ; Jund, Christian ; Grosvalet, Jean ; Jund, C. ; Grosvalet, J.

Author_Institution :

Westinghouse Research Laboratories, Pittsburgh, Pa.

Volume :

Issue :

fYear :

1968

fDate :

6/1/1968 12:00:00 AM

Firstpage :

362

Lastpage :

368

Abstract :

Measurements of apparent threshold voltages for conduction of both $n-p-n$ and $p-n-p$ MOS-

Keywords :

Aluminum; Argon; Cryogenics; Glass; MOSFETs; Photonic band gap; Silicon; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1968.16191

Filename :

1475093

Link To Document :