Title :
Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures
Author :
Wan, H.W. ; Chong, T.C. ; Chua, S.J.
Author_Institution :
Center for Optoelectron., Nat. Univ. of Singapore, Singapore
Abstract :
The polarization-dependent electroabsorption in lattice-matched and strained GaInAs/AlInAs quantum well structures is studied using photocurrent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fraction and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a compressive strain further enhances the polarization dependence.<>
Keywords :
aluminium compounds; electroabsorption; gallium arsenide; indium compounds; light polarisation; photoconductivity; semiconductor quantum wells; Ga mole fraction; GaInAs-AlInAs; GaInAs/AlInAs; biaxial tensile strain; compressive strain; heavy holes; lattice-matched; light holes; photocurrent spectral measurements; polarization dependence; polarization-insensitive electroabsorption; strained quantum well structures; transition energies; well size; Molecular beam epitaxial growth; Optical devices; Optical fiber polarization; Optical modulation; Optical polarization; Optical signal processing; Optical waveguides; Photoconductivity; Quantum well devices; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
