• DocumentCode
    1030710
  • Title

    Design and realisation of high-gain 1.5 μm semiconductor TW optical amplifiers

  • Author

    Brosson, P. ; Fernier, B. ; Benoit, J. ; Simon, J.C. ; Landousies, B.

  • Author_Institution
    CR-CGE, Laboratoires de Marcoussis, Marcoussis, France
  • Volume
    23
  • Issue
    6
  • fYear
    1987
  • Firstpage
    254
  • Lastpage
    256
  • Abstract
    The influence of the waveguide parameters, leakage current, electrical and thermal resistances on the maximum linear gain and the corresponding tuning wavelength of buried-heterostructure (BH) semiconductor travelling-wave optical amplifiers (TWAs) operating around 1.5 μm is theoretically analysed. A 26 dB gain TWA has been designed and fabricated from a 400 μm-long BH laser with a 0.2 μm-thick active layer by using low-reflectivity SiO (R ≈ 6 × 10-4) coatings.
  • Keywords
    semiconductor junction lasers; waveguides; 1.5 micron; 26 dB; BH laser; SiO coatings; active layer; leakage current; maximum linear gain; semiconductor travelling-wave optical amplifiers; thermal resistances; tuning wavelength; waveguide parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870186
  • Filename
    4257513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030710