Title :
DC and microwave characteristics of an In0.53Ga0.47As/In0.52Al0.48As modulation-doped quasi-MISFET
Author :
Seo, K.S. ; Bhattacharya, P.K. ; Gleason, K.R.
Author_Institution :
University of Michigan, Department of Electrical Engineering & Computer ScienceSolid State Electronics Laboratory, Ann Arbor, USA
Abstract :
The DC and microwave performance of a modulation-doped InGaAs/InAlAs quasi-MISFET structure, grown by molecular beam epitaxy, is reported. Improved performance is obtained with the incorporation of Ti in the source-drain metallisation with which contact resistances as low as 0.1 ¿mm are measured. An extrinsic transconductance of 310mS/mm and a best value of fT=32 GHz in a 1.0 ¿-gate device are measured at 300 K.
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 310 mS; 32 GHz; DC performance; In0.53Ga0.47As-In0.52Al0.48 As; contact resistances; cutoff frequency; extrinsic transconductance; microwave characteristics; modulation-doped quasi-MISFET; molecular beam epitaxy; source-drain metallisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870189
