DocumentCode :
1030760
Title :
Induced anisotropy of amorphous CoFeSiB and CoNbZr magnetic materials
Author :
de Wit, H.J. ; Witmer, C.H.M. ; Dirne, F.W.A.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2123
Lastpage :
2127
Abstract :
Uniaxial anisotropy induced by magnetic annealing was studied on amorphous CoFeSiB and CoNbZr layers. The kinetics of inducing the anisotropy is slowed down by a preanneal at 400°C. This effect is much stronger for CoNbZr than for CoFeSiB. An addition of 2% transition metal (TM) atoms does not influence the kinetics after preannealing appreciably. Simultaneously with inducing anisotropy magnetic annealing changes the magnetostriction. Two effects determine the anisotropy, orientation of pairs of different magnetic atoms and a contribution which also occurs in alloys with a single magnetic atom. The latter contribution is independent of type and size of the non-magnetic atom(s) and is attributed to Co - clusters.
Keywords :
Amorphous magnetic films/devices; Amorphous magnetic materials/devices; Magnetic anisotropy; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Annealing; Atomic layer deposition; Kinetic theory; Magnetic anisotropy; Magnetic materials; Magnetostriction; Perpendicular magnetic anisotropy;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065624
Filename :
1065624
Link To Document :
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