Induced anisotropy of amorphous CoFeSiB and CoNbZr magnetic materials

Author

de Wit, H.J. ; Witmer, C.H.M. ; Dirne, F.W.A.

Author_Institution

Philips Research Laboratories, Eindhoven, The Netherlands

Volume

23

Issue

5

fYear

1987

fDate

9/1/1987 12:00:00 AM

Firstpage

2123

Lastpage

2127

Abstract

Uniaxial anisotropy induced by magnetic annealing was studied on amorphous CoFeSiB and CoNbZr layers. The kinetics of inducing the anisotropy is slowed down by a preanneal at 400°C. This effect is much stronger for CoNbZr than for CoFeSiB. An addition of 2% transition metal (TM) atoms does not influence the kinetics after preannealing appreciably. Simultaneously with inducing anisotropy magnetic annealing changes the magnetostriction. Two effects determine the anisotropy, orientation of pairs of different magnetic atoms and a contribution which also occurs in alloys with a single magnetic atom. The latter contribution is independent of type and size of the non-magnetic atom(s) and is attributed to Co - clusters.

Keywords

Amorphous magnetic films/devices; Amorphous magnetic materials/devices; Magnetic anisotropy; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Annealing; Atomic layer deposition; Kinetic theory; Magnetic anisotropy; Magnetic materials; Magnetostriction; Perpendicular magnetic anisotropy;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1987.1065624

Filename

1065624