DocumentCode :
1030809
Title :
Al2O3-SiO2IGFET integrated circuits
Author :
Cheney, G.T. ; Jacobs, Ryan M.
Volume :
15
Issue :
6
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
410
Lastpage :
410
Keywords :
Aluminum oxide; Circuits; Dielectrics; Etching; Logic arrays; Metallization; Shift registers; Silicon; Switches; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16206
Filename :
1475108
Link To Document :
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