DocumentCode :
1030832
Title :
Silane-deposited SiO2in LSI
Author :
Wagner, S.R. ; Doelp, W.L., Jr.
Volume :
15
Issue :
6
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
410
Lastpage :
410
Keywords :
Bipolar transistors; Circuits; Fabrication; Large scale integration; MOSFETs; Moisture; Shift registers; Silicon compounds; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16209
Filename :
1475111
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1030832
بازگشت