• DocumentCode
    1030832
  • Title

    Silane-deposited SiO2in LSI

  • Author

    Wagner, S.R. ; Doelp, W.L., Jr.

  • Volume
    15
  • Issue
    6
  • fYear
    1968
  • fDate
    6/1/1968 12:00:00 AM
  • Firstpage
    410
  • Lastpage
    410
  • Keywords
    Bipolar transistors; Circuits; Fabrication; Large scale integration; MOSFETs; Moisture; Shift registers; Silicon compounds; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16209
  • Filename
    1475111