Title :
The MOS-BI—A monolithic MOS-bipolar integrated structure
Author :
Yu, Kwon Kyu ; Lin, H.C. ; Kwong, K.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Bipolar transistors; Circuits; Fabrication; Large scale integration; MOSFETs; Moisture; Shift registers; Silicon compounds; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16210
