Title :
Conductance of MOS transistors in saturation
Author :
Frohman-Bentchkowsky, D. ; Grove, A.S.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Absorption; Conducting materials; Detectors; Dielectrics; Electron traps; Kinetic energy; MOSFETs; Semiconductor materials; Tellurium; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16212
