Title :
Numerical calculation of the field distribution and related device parameters for MOS transistors in saturation
fDate :
6/1/1968 12:00:00 AM
Keywords :
Doping; Electron traps; Geometry; Laboratories; MOSFETs; Military computing; Poisson equations; Tellurium; Transconductance; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16215
