Title :
Low-noise 8 GHz PIN/FET optical receiver
Author_Institution :
Bell Communication Research, Red Bank, USA
Abstract :
An ultrawide-bandwidth, low-noise optical receiver has been designed for use in both multigigabit direct-detection or coherent heterodyne systems at 1.3 and 1.55 ¿m wavelengths. The receiver consists of a low-capacitance InGaAs PIN photodiode connected to a high-impedance three-stage GaAs FET preamplifier. Inductive peaking at the front end is used to reduce the receiver noise at high frequencies. The receiver has an equivalent input RMS noise current of < 12 pA/¿Hz from 4 to 7 GHz. The measured 3 dB bandwidth of 8 GHz is the widest receiver bandwidth reported to date.
Keywords :
III-V semiconductors; electron device noise; field effect transistor circuits; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; preamplifiers; solid-state microwave circuits; 1.3 micron; 1.55 micron; 8 GHz; GaAs; InGaAs; InGaAs PIN photodiode; PIN/FET optical receiver; coherent heterodyne systems; input RMS noise current; low-noise optical receiver; multigigabit direct detection systems; receiver bandwidth; receiver noise; three-stage GaAs FET preamplifier; ultrawide-bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870205
