Title :
Measurement of flicker phase noise of 1.4 GHz MESFET amplifier at temperatures between 300 K and 1.26 K
Author :
H¿¿rlimann, M.D. ; Hardy, W.N.
Author_Institution :
University of British Columbia, Department of Physics, Vancouver, Canada
Abstract :
We have measured the phase noise of a low-noise 1.4GHz MESFET amplifier at temperatures between 300K and 1.26K and for sideband frequencies between 0.15 Hz and I kHz. In our experimental configuration the phase noise between 4.2 K and 2.17 K was large and mainly caused by bubbling of the liquid helium cryogen. However, the intrinsic phase noise, observed below 2.17 K, was lower than at room temperature, in contrast to earlier reported behaviour of amplifiers operated at X-band.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; cooling; electric noise measurement; electron device noise; gallium arsenide; microwave amplifiers; solid-state microwave circuits; solid-state microwave devices; 0.15 to 1000 Hz; 1.26 to 300 K; 1.4 GHz; GaAs; MESFET amplifier; UHF; bubbling liquid He; experimental configuration; flicker phase noise measurement; liquid He cooling; sideband frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870206
