DocumentCode
1030910
Title
Measurement of flicker phase noise of 1.4 GHz MESFET amplifier at temperatures between 300 K and 1.26 K
Author
H¿¿rlimann, M.D. ; Hardy, W.N.
Author_Institution
University of British Columbia, Department of Physics, Vancouver, Canada
Volume
23
Issue
6
fYear
1987
Firstpage
283
Lastpage
284
Abstract
We have measured the phase noise of a low-noise 1.4GHz MESFET amplifier at temperatures between 300K and 1.26K and for sideband frequencies between 0.15 Hz and I kHz. In our experimental configuration the phase noise between 4.2 K and 2.17 K was large and mainly caused by bubbling of the liquid helium cryogen. However, the intrinsic phase noise, observed below 2.17 K, was lower than at room temperature, in contrast to earlier reported behaviour of amplifiers operated at X-band.
Keywords
III-V semiconductors; Schottky gate field effect transistors; cooling; electric noise measurement; electron device noise; gallium arsenide; microwave amplifiers; solid-state microwave circuits; solid-state microwave devices; 0.15 to 1000 Hz; 1.26 to 300 K; 1.4 GHz; GaAs; MESFET amplifier; UHF; bubbling liquid He; experimental configuration; flicker phase noise measurement; liquid He cooling; sideband frequencies;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870206
Filename
4257533
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