Title :
Fabrication and performance of an InP/InGaAsP monolithic 12 Ã\x97 12-element matrixed LED array
Author :
Koszi, L.A. ; Temkin, H. ; Chin, B.H. ; Napholtz, S.G. ; Segner, B.P.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The fabrication of a large-area InP/InGaAsP double-heterostructure LED monolithic matrixed array of 144 light-emitting elements is presented. Each LED produces ¿2.5 mW at an operating current of 150mA with per-element bandwidths of ¿200 Mbit/s. The array, which we believe to be the largest integrated optoelectronic circuit fabricated in this material system, is thus capable of very high power output and bandwidth. Such arrays are expected to be useful in many optical data link applications.
Keywords :
gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; optical communication equipment; 144 LED array; 150 mA; 2.5 mW; 200 Mbit/s; InP-InGaAsP; double-heterostructure; fabrication; integrated optoelectronic circuit; large area DH LED matrixed array; matrixed LED array; monolithic array; optical data link applications; performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870207
