Title :
Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures
Author :
Nathanson, H.C. ; Jund, C. ; Grosvalet, J.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Cryogenics; Frequency; Laboratories; MOSFETs; Magnetrons; Noise generators; Silicon; Temperature dependence; Temperature distribution; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16218
