DocumentCode

1030923

Title

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

Author

Nathanson, H.C. ; Jund, C. ; Grosvalet, J.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

412

Lastpage

412

Keywords

Cryogenics; Frequency; Laboratories; MOSFETs; Magnetrons; Noise generators; Silicon; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16218

Filename

1475120