Title :
InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layers
Author :
Emeis, N. ; Beneking, H.
Author_Institution :
Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
In the InP/GaInAs material system heterojunction bipolar transistors have been fabricated on isoelectronically doped InP buffer layers. The greatly improved performance of the B¿E diodes, especially at low forward bias, is reflected in the improved behaviour of bipolar transistors.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor technology; InP; InP-GaInAs; base emitter diode; behaviour of bipolar transistors; heterojunction bipolar transistors; isoelectronically doped InP buffer layers; low forward bias; performance; semiconductors; strained buffer layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870214
