Title :
High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD
Author :
Kamada, Masaru ; Kobayashi, Takehiko ; Ishikawa, Hiroshi ; Mori, Yojiro ; Kaneko, Kunihiko ; Kojima, C.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
We fabricated a l¿m-gate-length heterointerface FET (HIFET) using a selectively doped AlInAs/GaInAs heterostructure grown by atmospheric-pressure MOCVD. The HIFET showed a transconductance as high as 530mS/mm at room temperature. This is the highest measurement of transconductance ever reported in this system.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; 1 micron; AlInAs-GaInAs heterostructure; HEMT; atmospheric-pressure MOCVD; heterointerface FET; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870216
