DocumentCode :
1031007
Title :
Magnetization reversal mechanism in CoCr media for perpendicular recording
Author :
Cheng-Zhang, Li ; Lodder, Cock
Author_Institution :
University of Twente, Enschede, The Netherlands
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2260
Lastpage :
2262
Abstract :
It has recently been shown [1] that hysteresis loss as a ftulction of the direction of the applied field can be used as a criteria to determine the reversal mechanism in CoCr films. In this paper we present hysteresis loss ( Wh/Wh\\perp ) and orientation ratio (OR) as function of the amplitude and direction of the applied field for low and high Hc\\perp /Hk sputtered CoCr films. The reversal behaviour depends strongly on the amplitude and direction of the field. The presence of all initial layer has an important influence on the type of reversal. The rotational mechanism governs the switching in high Hc\\perp /Hk films while the domain-wall reversal acts in the low coercivity film.
Keywords :
Magnetization reversal; Perpendicular magnetic recording; Coercive force; Crystallization; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetization reversal; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Semiconductor films; Tiles;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065647
Filename :
1065647
Link To Document :
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