DocumentCode
1031021
Title
20 GHz dynamic frequency divider with GaAs advanced SAINT and air-bridge technology
Author
Osafune, K. ; Enoki, Tsutomu ; Muraguchi, M. ; Ohwada, Kazunari
Author_Institution
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume
23
Issue
6
fYear
1987
Firstpage
300
Lastpage
302
Abstract
A GaAs BFL dynamic binary frequency divider is designed and fabricated using advanced SAINT with asymmetric n+-layers and air-bridge technology. Operation above 20 GHz is achieved due to advanced SAINT FETs with 0.3 ¿m gate length and the reduction of parasitic capacitances between interlayer lines.
Keywords
III-V semiconductors; counting circuits; field effect integrated circuits; frequency dividers; gallium arsenide; integrated circuit technology; integrated logic circuits; 20 GHz; 20 GHz dynamic frequency divider; BFL dynamic binary frequency divider; GaAs; air-bridge technology; interlayer lines; reduction of parasitic capacitances;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870218
Filename
4257545
Link To Document