Highly efficient InGaAs/InAIAs MQW waveguide phase shifter

Author

Wakita, Ken ; Yoshikuni, Y. ; Kawamura, Yuriko

Author_Institution

NTT Electrical Communications Laboratories, Atsugi, Japan

Volume

23

Issue

6

fYear

1987

Firstpage

303

Lastpage

304

Abstract

Characteristics of an optical waveguide phase shifter that uses field-induced variation of the refractive index change in reverse-biased PIN InGaAs/InAlAs multiple quantum wells (MQWs) are reported for the first time. High mesa waveguides are fabricated by molecular beam epitaxy and wet chemical etching. The largest phase-shifting efficiency (66Â° / V mm) ever reported in a reverse-biased structure operating at long wavelengths is obtained near the bandgap; however, this is located in a low absorption wavelength region.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical modulation; optical waveguide components; phase shifters; 1.552 micron; InGaAs-InAlAs; MBE; MQW waveguide phase shifter; field controlled refractive index; long wavelengths; low absorption wavelength region; molecular beam epitaxy; multiple quantum wells; optical waveguide phase shifter; phase-shifting efficiency; reverse biased PIN diode; reverse-biased structure; semiconductors; wet chemical etching;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19870220

Filename

4257547