Title :
A microwave GaAs field-effect transistor
Author :
Hooper, W.W. ; Hower, P.L.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Alloying; Contacts; Electrical capacitance tomography; Electron mobility; Frequency; Gallium arsenide; Geometry; Microwave FETs; Schottky barriers; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16230
