Title :
Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures
Author :
Taylor, S. ; Barlow, K.J. ; Eccleston, W. ; Kiermasz, A.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Abstract :
Oxides have been grown on silicon using an oxygen plasma at substrate temperatures less than 600°C in two different oxidation systems. Slices from 18 mm up to 100 mm in diameter have been oxidised and have proved to have similar growth kinetics. Oxide fixed charge levels are in the range 1010¿1011/cm2 with electrical breakdown strengths up to 12 MV/cm.
Keywords :
elemental semiconductors; oxidation; semiconductor technology; silicon; 18 to 100 mm; O plasma; RF oxidation; Si oxidation; Si-SiO2; electrical breakdown strengths; fixed charge levels; growth kinetics; growth of thin oxides; low temperatures; microwave oxidation systems; plasma oxidation; substrate temperatures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870229
