• DocumentCode
    1031126
  • Title

    Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures

  • Author

    Taylor, S. ; Barlow, K.J. ; Eccleston, W. ; Kiermasz, A.

  • Author_Institution
    University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
  • Volume
    23
  • Issue
    7
  • fYear
    1987
  • Firstpage
    309
  • Lastpage
    310
  • Abstract
    Oxides have been grown on silicon using an oxygen plasma at substrate temperatures less than 600°C in two different oxidation systems. Slices from 18 mm up to 100 mm in diameter have been oxidised and have proved to have similar growth kinetics. Oxide fixed charge levels are in the range 1010¿1011/cm2 with electrical breakdown strengths up to 12 MV/cm.
  • Keywords
    elemental semiconductors; oxidation; semiconductor technology; silicon; 18 to 100 mm; O plasma; RF oxidation; Si oxidation; Si-SiO2; electrical breakdown strengths; fixed charge levels; growth kinetics; growth of thin oxides; low temperatures; microwave oxidation systems; plasma oxidation; substrate temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870229
  • Filename
    4257557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031126