• DocumentCode
    1031162
  • Title

    Bonding silicon wafer to silicon nitride with spin-on glass as adhesive

  • Author

    Yamada, Akimasa ; Kawasaki, T. ; Kawashima, Mitsumasa

  • Author_Institution
    Sumitomo Metal Mining Co. Ltd., Electronics Materials Laboratory, Tokyo, Japan
  • Volume
    23
  • Issue
    7
  • fYear
    1987
  • Firstpage
    314
  • Lastpage
    315
  • Abstract
    Using spin-on glass (SOG) as an adhesive, an Si wafer with thermal oxide was successfully bonded to one with an RF-sputtered Si3N4 film. This ensures that SOG films are effective in bonding Si wafers to less reactive surfaces than Si or SiO2 such as silicon nitride. It was also found that the previously reported bonding procedure can be simplified by suppressing the spin-induced radial striations of the SOG films.
  • Keywords
    elemental semiconductors; field effect integrated circuits; semiconductor technology; silicon; silicon compounds; 3D IC technology; RF-sputtered Si3N4 film; SOG films; Si-Si3N4 wafer; Si-SiO2 wafer; bonding Si wafers; bonding procedure; spin-on glass as adhesive;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870233
  • Filename
    4257561