DocumentCode :
1031231
Title :
Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy
Author :
Greene, P.D. ; Prins, A.D. ; Dunstan, D.J. ; Adams, A.R.
Author_Institution :
STC Technology Ltd., Harlow, UK
Volume :
23
Issue :
7
fYear :
1987
Firstpage :
324
Lastpage :
325
Abstract :
Stacks containing from 20 to 100 alternating n and p-layers, each less than 100 nm thick, have been produced by liquid-phase epitaxy in both InP and in the quaternary alloy Int¿x GaxAsyP1¿y. Increasing the excitation intensity shifts the photoluminescence (PL) towards shorter wavelengths by the expected magnitude. Hetero-nipi quaternary structures displaying two PL peaks have also been grown. The relative intensities of the two peaks depend strongly on the excitation intensity.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor superlattices; 100 nm; In1-xGaxAsyP1-y; InP; LPE; PL peaks; excitation intensity; liquid-phase epitaxy; nipi structures; photoluminescence wavelength shift; quarternary doping superlattices; quaternary alloy;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870240
Filename :
4257568
Link To Document :
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