• DocumentCode
    1031249
  • Title

    Optoelectronic time division multiplexing

  • Author

    Albares, D.J. ; Garcia, Gonzalo Andres ; Chang, C.T. ; Reedy, R.E.

  • Author_Institution
    Naval Ocean Systems Center, San Diego, USA
  • Volume
    23
  • Issue
    7
  • fYear
    1987
  • Firstpage
    327
  • Lastpage
    328
  • Abstract
    The concept of using optoelectronic (photoconductive) switches as the sampling element in time division multiplexing is introduced in the context of VLSI off-chip data transmission. A 4:1 multiplexer was fabricated in Cr : GaAs, activated by a GaAs laser via optical fibre delay lines and operated at 2.5 Gbit/s.
  • Keywords
    III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; photoconducting devices; semiconductor switches; time division multiplexing; 2.5 Gbit/s; 4:1 multiplexer; GaAs:Cr; VLSI off-chip data transmission; optical fibre delay lines; optoelectronic TDM; photoconductive switches; sampling element; semiconductor; time division multiplexing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870242
  • Filename
    4257570