DocumentCode
1031249
Title
Optoelectronic time division multiplexing
Author
Albares, D.J. ; Garcia, Gonzalo Andres ; Chang, C.T. ; Reedy, R.E.
Author_Institution
Naval Ocean Systems Center, San Diego, USA
Volume
23
Issue
7
fYear
1987
Firstpage
327
Lastpage
328
Abstract
The concept of using optoelectronic (photoconductive) switches as the sampling element in time division multiplexing is introduced in the context of VLSI off-chip data transmission. A 4:1 multiplexer was fabricated in Cr : GaAs, activated by a GaAs laser via optical fibre delay lines and operated at 2.5 Gbit/s.
Keywords
III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; photoconducting devices; semiconductor switches; time division multiplexing; 2.5 Gbit/s; 4:1 multiplexer; GaAs:Cr; VLSI off-chip data transmission; optical fibre delay lines; optoelectronic TDM; photoconductive switches; sampling element; semiconductor; time division multiplexing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870242
Filename
4257570
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