Title :
A germanium avalanche photodetector for 1.06 microns
fDate :
6/1/1968 12:00:00 AM
Keywords :
Breakdown voltage; Capacitance; Germanium; P-i-n diodes; P-n junctions; Photodetectors; Photodiodes; Silicon carbide; Temperature dependence; Wavelength measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16254
