Title :
Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films
Author :
Vu, D.P. ; Sono, A.
Author_Institution :
CNET-CNS, Meylan, France
Abstract :
Self-aligned Si MESFETs using tungsten for the gate have been fabricated in lamp-recrystallised silicon-on-insulator materials. Devices with gate lengths of 1.5¿m exhibit a DC transconductance of 7.5 mS/mm and a calculated cutoff frequency of 3.9GHz.
Keywords :
Schottky gate field effect transistors; VLSI; elemental semiconductors; field effect integrated circuits; silicon; 1.5 micron; 3.9 GHz; 7.5 mS; DC transconductance; MESFETs; Schottky gate electrode; VLSI; W-Si-SiO2; cutoff frequency; gate lengths; lamp recrystallised SOI films; self aligned devices; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870261
