Title :
Electromigration effects in power MESFET rectifying and ohmic contacts
Author :
Canali, Carlo ; Chiussi, F. ; Fantini, F. ; Umena, L. ; Vanzi, M.
Author_Institution :
UniversitÃ\xa0 di Padova, Istituto di Electtrotecnica ed Elettronica, Padova, Italy
Abstract :
Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.
Keywords :
Schottky gate field effect transistors; electromigration; life testing; ohmic contacts; power transistors; rectification; reliability; semiconductor device testing; solid-state microwave devices; electrical degradation; electromigration; failure mechanisms; high current density; life testing; microwave devices; ohmic contacts; power MESFETs; rectifying contacts; reliability; safety zone;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870267
