Title :
Gigabit optical transmitter GaAs MESFET IC
Author :
Utsumi ; Tezuka, A. ; Nishii, Kento ; Bando, Kazuki ; Inoue, Ken ; Onuma, T.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Semiconductor Research Centre, Moriguchi, Japan
Abstract :
A GaAs optical transmitter IC consisting of input buffers, a D-type flip-flop, an NRZ/RZ code convertor and a light source current driver has been developed for use in fibre-optic communication systems, employing D-MESFET SCFL by the Pt buried gate FET process. 1.1 Gbit/s modulation of an LD in RZ format with 20 mA peak drive current has been demonstrated.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; 1.1 Gbit/s; 20 mA; D-MESFET SCFL; D-type flip-flop; GaAs; MESFET IC; NRZ/RZ code convertor; fibre-optic communication systems; input buffers; light source current driver; optical transmitter IC; peak drive current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870274
