Title :
Heterostructure complementary technology
Author :
Simmons, Jay G. ; Taylor, Graham W.
Author_Institution :
University of Bradford, Microelectronics & CADMAT Centre, Bradford, UK
Abstract :
A complementary inverter configuration based on two new heterostructure field-effect devices is proposed. The FETs are fabricated in a common substrate grown by molecular-beam epitaxy. The devices rely on the formation of inversion layers at heterojunction interfaces.
Keywords :
field effect integrated circuits; high electron mobility transistors; invertors; junction gate field effect transistors; GaAs-AlGaAs; complementary inverter configuration; heterojunction interfaces; heterostructure FET; heterostructure JFET; heterostructure field-effect devices; inversion layers; molecular-beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870278
