Title :
Closed-form physical model for VLSI bipolar devices considering energy transport
Author :
Kuo, J.B. ; Huang, H.J. ; Lu, T.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fDate :
2/3/1994 12:00:00 AM
Abstract :
A closed-form physical model is reported for VLSI bipolar devices considering energy transport. Based on the model, for a base width of 810 Å, the bipolar device, biased at Vcb=2 V, has a peak electron temperature of over 700 K, which results in a 5% reduction in the collector current
Keywords :
VLSI; bipolar integrated circuits; bipolar transistors; semiconductor device models; 2 V; 700 K; 810 A; VLSI bipolar devices; closed-form physical model; collector current; energy transport; peak electron temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940125
