Title :
Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laser
Author :
Suzuki, Yuya ; Mukai, Sonoyo ; Yajima, Hiroya ; Sato, Takao
Author_Institution :
Electrotechnical Laboratory, Radio- and Opto-Electronics Division, Tsukuba, Japan
Abstract :
A successful demonstration of a transverse junction buried heterostructure AlGaAs diode laser is described. A typical threshold current of 40mA and a typical differential efficiency of 50% is obtained for the 1.5¿m-wide active region and the 250¿m-long diode.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 40 mA; 50 percent; differential efficiency; semiconductor laser; threshold current; transverse junction buried heterostructure AlGaAs diode laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870281
