Title :
11 GHz ultrawide-bandwidth monolithic photoreceiver using InGaAs pin PD and InAlAs/InGaAs HEMTs
Author :
Akahori, Y. ; Ikeda, Makoto ; Kohzen, A. ; Akatsu, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
2/3/1994 12:00:00 AM
Abstract :
A very-wide-bandwidth long-wavelength monolithically integrated photoreceiver is presented which comprises an InGaAs pin PD and a transimpedance amplifier. The receiver uses epilayers grown by one-step MOVPE. The InGaAs channel high-electron-mobility field effect transistor (HEMT) employs an Si planar-doped carrier supplying layer to obtain larger transconductance and uniform threshold voltage. The 0.5 μm gate length is used for HEMTs to enhance the speed of operation. This receiver shows a very wide bandwidth of 11 GHz, and opened eye for a 15 Gbit/s NRZ signal. This is the first demonstration of a long-wavelength monolithic photoreceiver receiving a 15 Gbit/s light signal
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 0.5 mum; 11 GHz; 15 Gbit/s; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InGaAs pin photodiode; Si planar-doped carrier; gate length; high-electron-mobility field effect transistor; transconductance; ultrawide-bandwidth monolithic photoreceiver; uniform threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940147
