Title :
MBE-grown AlGaAs/GaAs HBTs on InP substrate
Author :
Ito, H. ; Ishibashi, Takayuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
AlGaAs/GaAs HBTs are fabricated on InP substrates for the first time. Preliminary results show a current gain of 5 at a collector current density of 2 × 104A/cm2 in spite of a dislocation density higher than 109/cm2.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; AlGaAs-GaAs bipolar transistors; HBTs; InP substrates; MBE growth; collector current density; current gain; dislocation density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870288
