DocumentCode :
1031753
Title :
Analysis of the I(V) characteristics of p
+
-n-π-p
+
structures for the determination of hole velocity in silicon
Author :
Scharfetter, D.L. ; Seidel, Thomas E.
Volume :
15
Issue :
6
fYear :
1968
fDate :
6/1/1968 12:00:00 AM
Firstpage :
426
Lastpage :
426
Keywords :
Radiative recombination;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16298
Filename :
1475200
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1031753
