DocumentCode :
1031760
Title :
Signal gain saturation in two-channel common amplification using a 1.5μm InGaAsP travelling-wave laser amplifier
Author :
Mukai, T. ; Inoue, K. ; Saitoh, T.
Author_Institution :
NTT, Electrical Communications Laboratories, Musashino, Japan
Volume :
23
Issue :
8
fYear :
1987
Firstpage :
396
Lastpage :
397
Abstract :
Signal gain saturation and crosstalk characteristics in two-channel common amplification were investigated using a 1.5μm travelling-wave laser amplifier. Simultaneous amplification in the two channels causes gain saturation of the other, which results in an approximate 3 dB reduction in saturation output power. The total output power is confirmed to dominate the gain saturation in laser amplifiers.
Keywords :
III-V semiconductors; crosstalk; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.5 micron; InGaAsP travelling wave laser amplifier; crosstalk characteristics; output power; saturation output power; semiconductor laser; signal gain saturation; two-channel common amplification;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870289
Filename :
4257618
Link To Document :
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