Title :
New interpretation of structure of thermally grown silicon dioxide
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Abstract :
New evidence suggesting that the structure of thermally grown silicon dioxide films may not be totally amorphous is presented. Mathematical deconvolution of the Si¿O absorption at 1075 cm¿1 consistently reveals two distinct Gaussian lineshapes. Possible sources for these derived peaks are discussed.
Keywords :
infrared spectra of inorganic solids; insulating thin films; noncrystalline state structure; oxidation; silicon compounds; spectral line breadth; Gaussian lineshapes; SiO2; derived peaks; thermally grown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870299
