Title :
0°-phase-shift, single-lobe operation from wide-waveguide interferometric (WWI) phase-locked arrays of InGaAsP/InP (λ = 1.3 μm) diode lasers
Author :
Botez, D. ; Pham, Thach ; Tran, Duke
Author_Institution :
TRW Electro-Optics Research Center, Redondo Beach, USA
Abstract :
The use of a close-coupled type of interferometric phase-locked array allows 10-11-element devices to operate in a single, diffraction-limited beam to 70% above lasing threshold.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; phase-locked loops; semiconductor junction lasers; 1.3 micron; III-V semiconductors; InGaAsP-InP; close-coupled type; diffraction-limited beam; diode lasers; interferometric phase-locked array; lasing threshold; phase-locked arrays; phase-shift; single-lobe operation; wide-waveguide interferometric;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870302
