• DocumentCode
    1031895
  • Title

    0°-phase-shift, single-lobe operation from wide-waveguide interferometric (WWI) phase-locked arrays of InGaAsP/InP (λ = 1.3 μm) diode lasers

  • Author

    Botez, D. ; Pham, Thach ; Tran, Duke

  • Author_Institution
    TRW Electro-Optics Research Center, Redondo Beach, USA
  • Volume
    23
  • Issue
    8
  • fYear
    1987
  • Firstpage
    416
  • Lastpage
    417
  • Abstract
    The use of a close-coupled type of interferometric phase-locked array allows 10-11-element devices to operate in a single, diffraction-limited beam to 70% above lasing threshold.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; phase-locked loops; semiconductor junction lasers; 1.3 micron; III-V semiconductors; InGaAsP-InP; close-coupled type; diffraction-limited beam; diode lasers; interferometric phase-locked array; lasing threshold; phase-locked arrays; phase-shift; single-lobe operation; wide-waveguide interferometric;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870302
  • Filename
    4257631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031895