Title :
Strain effects in (AlyGa1-y)xIn 1-xP lasers operating at fixed threshold gain
Author :
Summers, Huw D. ; Blood, P.
Author_Institution :
Dept. of Phys., Univ. of Wales Coll. of Cardiff
fDate :
2/3/1994 12:00:00 AM
Abstract :
The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65 Å in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; piezo-optical effects; semiconductor lasers; (AlyGa1-y)xIn1-xP lasers; 65 angstrom; AlGaInP; AlGaInP quantum well lasers; compressive strain; fixed threshold gain; fixed well width; intrinsic threshold current; strain effects; tensile strain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940168
