• DocumentCode
    1031897
  • Title

    Strain effects in (AlyGa1-y)xIn 1-xP lasers operating at fixed threshold gain

  • Author

    Summers, Huw D. ; Blood, P.

  • Author_Institution
    Dept. of Phys., Univ. of Wales Coll. of Cardiff
  • Volume
    30
  • Issue
    3
  • fYear
    1994
  • fDate
    2/3/1994 12:00:00 AM
  • Firstpage
    236
  • Lastpage
    238
  • Abstract
    The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65 Å in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; piezo-optical effects; semiconductor lasers; (AlyGa1-y)xIn1-xP lasers; 65 angstrom; AlGaInP; AlGaInP quantum well lasers; compressive strain; fixed threshold gain; fixed well width; intrinsic threshold current; strain effects; tensile strain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940168
  • Filename
    267218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031897