Title :
Analysis of threshold current density in 2.2 μm GaInAsSb/GaAlAsSb/GaSb DH lasers
Author :
Brosson, P. ; Benoit, J. ; Joullie, A. ; Sermage, B.
Author_Institution :
CR-CGE, Laboratoires de Marcoussis, Marcoussis, France
Abstract :
From comparison of published experimental data with a theoretical model of GaInAsSb/GaAlAsSb/GaSb DH lasers emitting at 2.2 μm, the Auger coefficient of the active material has been determined to be C ≅ 1028cm6S-1. A threshold current density as low as 2 kA/cm2 is expected at 300 K for such a DH with a 0.3 μm-thick active layer and confinement layers with a high aluminium content (x = 0.6).
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; semiconductor junction lasers; 2.2 micron; Auger coefficient; DH lasers; GaInAsSb-GaAlAsSb-GaSb; III-V semiconductors; active material; confinement layers; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870303
