DocumentCode :
1031989
Title :
Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers
Author :
Perrin, S.D. ; Spurdens, P.C.
Volume :
30
Issue :
3
fYear :
1994
fDate :
2/3/1994 12:00:00 AM
Firstpage :
227
Lastpage :
229
Abstract :
The authors have grown wafers with 16 zero-net-strain and conventionally strained In0.68Ga0.32As quantum wells and eight strain-compensated In0.84Ga0.16As 0.68P0.32 quantum wells. Buried heterostructure lasers were fabricated and reliability studies have been carried out. Initial estimates give lifetimes of around 100 years
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; life testing; reliability; semiconductor lasers; 100 yr; In0.68Ga0.32As; In0.84Ga0.16As0.68P0.32 ; InGaAs-InGaAsP-InP; buried heterostructure lasers; lifetimes; long-term reliability; strain-compensated In0.84Ga0.16As0.68 P0.32 quantum wells; strain-compensated InGaAs(P)/InP MQW BH lasers; strained In0.68Ga0.32As quantum wells; wafers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940150
Filename :
267224
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1031989
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