Title :
Substrateless singlemode vertical cavity surface-emitting GaAs/GaAlAs laser diode
Author :
Schraud, G. ; Grothe, H. ; Schroder, St.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech., Tech. Univ. Munchen
fDate :
2/3/1994 12:00:00 AM
Abstract :
Novel low threshold GaAs vertical cavity surface-emitting lasers (VCSELs) with a completely removed substrate for compact hybrid integration are fabricated. Room temperature CW threshold currents of 3.6 mA and external efficiencies of 25% are achieved with 8 μm diameter gain guided VCSELs. Stable singlemode operation up to temperatures of 60°C is demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; laser cavity resonators; laser modes; semiconductor lasers; 25 percent; 3.6 mA; 60 degC; 8 micron; GaAs-GaAlAs; MBE; compact hybrid integration; external efficiencies; gain guided VCSEL; low threshold GaAs VCSEL; room temperature CW threshold currents; stable single mode operation; substrateless singlemode vertical cavity surface-emitting GaAs/GaAlAs laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940175
