• DocumentCode
    1032040
  • Title

    Effect of residual doping on optimum structure of multiquantum-well optical modulators

  • Author

    Newson, D.J. ; Kurobe, A.

  • Author_Institution
    Toshiba Corporation, Research & Development Center, Kawasaki, Japan
  • Volume
    23
  • Issue
    9
  • fYear
    1987
  • Firstpage
    439
  • Lastpage
    440
  • Abstract
    Using a variational method we have calculated the effect of residual doping on the optimum structure of multiquantum-well (MQW) optical modulators which utilise the quantum confined Stark effect. Residual doping gives a nonuniform electric field and a degraded modulation depth. For example, for a structure consisting of 100 Å GaAs wells and 100 Å Ga0.7A10.3As barriers, we calculate the optimum number of wells to be 20 for a doping of 5 × 1015 cm¿3.
  • Keywords
    III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; optical modulation; semiconductor doping; 100 A; GaAs-Ga0.7Al0.3As; MQW optical modulators; effect of residual doping; modulation depth; multiquantum-well optical modulators; nonuniform electric field; optimum number of wells; optimum structure; quantum confined Stark effect; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870316
  • Filename
    4257646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032040