• DocumentCode
    1032049
  • Title

    Narrow FMR linewidth dependence on growth conditions in LPE YIG films

  • Author

    Desvignes, J.M. ; Mahasoro, D. ; Gall, Harald

  • Author_Institution
    C.N.R.S., Meudon-Bellevue, France
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    3724
  • Lastpage
    3726
  • Abstract
    Growth process of single crystal YIG and YIG : La films with narrow FMR linewidth Δ H is reported from the isothermal dipping method of liquid phase epitaxy. The growth conditions have been investigated, not to obtain the lowest Δ H value on a few samples, but to produce in routine regime narrow linewidth garnet films in the 0.3-0.5 Oe range independent of the film thickness. The ΔH value measured at 9.3 GHz corresponds for a given film to the mean value of linewidth deduced from six or more 3 × 3 mm2samples cut from the full wafer.
  • Keywords
    Epitaxial growth; Ferroresonance; YIG films/devices; Epitaxial growth; Garnet films; Iron; Lattices; Magnetic resonance; Microwave devices; Stripline; Substrates; Volume relaxation; Yttrium;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065740
  • Filename
    1065740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032049