Title :
Characteristics of CO2-Xe-He lasers
fDate :
6/1/1968 12:00:00 AM
Keywords :
Bipolar transistors; Conductivity; Current measurement; Doping; Hafnium; Laboratories; Semiconductor films; Silicon; Time measurement; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16332
